IRF740BPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

147W Tc

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

526pF @ 100V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

400V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

JEDEC-95 Code :

TO-220AB

Published :

2016

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

DS Breakdown Voltage-Min :

400V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Mount :

Through Hole

Drain-source On Resistance-Max :

0.6Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Vgs (Max) :

±30V

Number of Pins :

3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

50 ns

Turn On Delay Time :

14 ns

Threshold Voltage :

5V

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Rds On (Max) @ Id, Vgs :

600m Ω @ 5A, 10V

Terminal Finish :

MATTE TIN OVER NICKEL

Weight :

6.000006g

Continuous Drain Current (ID) :

10A

Number of Terminations :

3

FET Type :

N-Channel

Rise Time :

27ns

Fall Time (Typ) :

24 ns