IRF740B

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Mfr.Part #
IRF740B
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 10A TO220-3
Stock
42,359
In Stock :
42,359

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
Power Dissipation-Max :
134W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
MATTE TIN
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Qualification Status :
COMMERCIAL
Pulsed Drain Current-Max (IDM) :
40A
Avalanche Energy Rating (Eas) :
450 mJ
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
400V
Input Capacitance (Ciss) (Max) @ Vds :
1.8pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.54Ohm
Transistor Application :
SWITCHING
Vgs (Max) :
±30V
Reach Compliance Code :
Unknown
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
10A
Pbfree Code :
yes
DS Breakdown Voltage-Min :
400V
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
540m Ω @ 5A, 10V
JESD-609 Code :
e3
FET Type :
N-Channel
Mounting Type :
Through Hole
Datasheets
IRF740B
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor IRF740B from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, IRF740B pinout, IRF740B datasheet PDF, IRF740B amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor IRF740B ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor IRF740B


N-Channel Tube 540m Ω @ 5A, 10V ±30V 1.8pF @ 25V 53nC @ 10V 400V TO-220-3

IRF740B Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.The maximum input capacitance of this device is 1.8pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 10A.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 400V.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF740B Features


the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 40A.
a 400V drain to source voltage (Vdss)


IRF740B Applications


There are a lot of Rochester Electronics, LLC
IRF740B applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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