IRF7406GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Drain to Source Voltage (Vdss) :

30V

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

8-SO

Drain to Source Breakdown Voltage :

-30V

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Input Capacitance :

1.1nF

Series :

HEXFET®

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Power Dissipation :

2.5W

Turn-Off Delay Time :

45 ns

Turn On Delay Time :

16 ns

Element Configuration :

Single

Mount :

Surface Mount

Length :

4.9784mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Rds On Max :

45 mΩ

Number of Pins :

8

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Height :

1.4986mm

Rds On (Max) @ Id, Vgs :

45mOhm @ 2.8A, 10V

RoHS Status :

RoHS Compliant

Rise Time :

33ns

Fall Time (Typ) :

47 ns

Continuous Drain Current (ID) :

-5.8A

Drain to Source Resistance :

45mOhm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Width :

3.9878mm

Vgs(th) (Max) @ Id :

1V @ 250μA