IRF7404TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Length :

4.9784mm

Operating Temperature :

-55°C~150°C TJ

Row Spacing :

6.3 mm

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta

Recovery Time :

100 ns

Drain Current-Max (Abs) (ID) :

5.3A

Series :

HEXFET®

Power Dissipation-Max :

2.5W Ta

Height :

1.4986mm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

-6.7A

Transistor Element Material :

SILICON

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Fall Time (Typ) :

65 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Width :

3.9878mm

Mounting Type :

Surface Mount

Number of Terminations :

8

Number of Pins :

8

Number of Elements :

1

Terminal Form :

Gull wing

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Resistance :

40mOhm

JESD-609 Code :

e3

Dual Supply Voltage :

-20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

FET Type :

P-Channel

Power Dissipation :

2.5W

Drain to Source Breakdown Voltage :

-20V

Drain to Source Voltage (Vdss) :

20V

Nominal Vgs :

-700 mV

Vgs(th) (Max) @ Id :

700mV @ 250μA

Turn-Off Delay Time :

100 ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

14 ns

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Voltage - Rated DC :

-20V

Threshold Voltage :

-700mV

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

40m Ω @ 3.2A, 4.5V

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Current Rating :

-6.7A

Rise Time :

32ns

Gate to Source Voltage (Vgs) :

12V