IRF7403TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

22m Ω @ 4A, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Length :

4.9784mm

Number of Terminations :

8

Rise Time :

37ns

Width :

3.9878mm

Dual Supply Voltage :

30V

Recovery Time :

78 ns

Row Spacing :

6.3 mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Form :

Gull wing

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.5W

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

6.7A

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta

Lead Free :

Lead Free

Published :

1997

Fall Time (Typ) :

40 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount, Through Hole

Vgs (Max) :

±20V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Nominal Vgs :

1 V

Power Dissipation-Max :

2.5W Ta

Continuous Drain Current (ID) :

8.5A

Mounting Type :

Surface Mount

Resistance :

22mOhm

Height :

1.4986mm

Number of Elements :

1

Current Rating :

8.5A

Threshold Voltage :

1V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Radiation Hardening :

No

Contact Plating :

Tin

Turn On Delay Time :

10 ns

Turn-Off Delay Time :

42 ns