IRF7403TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.022Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G8

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

22m Ω @ 4A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

8

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Number of Elements :

1

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Published :

1997

FET Type :

N-Channel

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Series :

HEXFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

6.7A

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

LOGIC LEVEL COMPATIBLE

JEDEC-95 Code :

MS-012AA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing