IRF7403PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Published :

1997

Packaging :

Tube

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

8.5A

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.022Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

22m Ω @ 4A, 10V

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

Series :

HEXFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pulsed Drain Current-Max (IDM) :

34A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

JEDEC-95 Code :

MS-012AA

Number of Terminations :

8

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING