IRF7402TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2007

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 15V

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

JESD-30 Code :

R-PDSO-G8

Additional Feature :

FAST SWITCHING

Drain Current-Max (Abs) (ID) :

6.8A

Drain-source On Resistance-Max :

0.035Ohm

JEDEC-95 Code :

MS-012AA

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

700mV @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

54A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

6.8A Ta

Transistor Application :

SWITCHING

Number of Elements :

1

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

20V

Number of Terminations :

8

Transistor Element Material :

SILICON

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.1A, 4.5V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

JESD-609 Code :

e3