IRF7401TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead, Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Number of Pins :

8

Element Configuration :

Single

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Power Dissipation-Max :

2.5W Ta

Row Spacing :

6.3 mm

Length :

4.9784mm

Published :

2004

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Voltage - Rated DC :

20V

Series :

HEXFET®

Current Rating :

8.7A

Additional Feature :

ULTRA LOW RESISTANCE

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

35A

Factory Lead Time :

12 Weeks

Turn On Delay Time :

13 ns

Height :

1.4986mm

Turn-Off Delay Time :

65 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

8.7A Ta

Vgs(th) (Max) @ Id :

700mV @ 250μA

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

20V

Fall Time (Typ) :

92 ns

Rise Time :

72ns

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Transistor Application :

SWITCHING

Terminal Position :

Dual

Threshold Voltage :

700mV

Power Dissipation :

2.5W

Resistance :

22mOhm

Vgs (Max) :

±12V

Number of Terminations :

8

Continuous Drain Current (ID) :

8.7A

Dual Supply Voltage :

20V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 4.5V

Packaging :

Tape and Reel (TR)

Nominal Vgs :

700 mV

Rds On (Max) @ Id, Vgs :

22m Ω @ 4.1A, 4.5V

Number of Elements :

1

Width :

3.9878mm

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)