IRF740

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Additional Feature :

HIGH VOLTAGE, FAST SWITCHING

Drain to Source Breakdown Voltage :

400V

FET Type :

N-Channel

Series :

PowerMESH™ II

Number of Elements :

1

Drain-source On Resistance-Max :

0.55Ohm

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Qualification Status :

Not Qualified

Number of Terminations :

3

Voltage - Rated DC :

400V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

125W

JESD-609 Code :

e3

Base Part Number :

IRF7

Element Configuration :

Single

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Turn On Time-Max (ton) :

79ns

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

10A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-65°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Feedback Cap-Max (Crss) :

120 pF

Current Rating :

10A

Avalanche Energy Rating (Eas) :

520 mJ

Voltage :

400V

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Turn Off Time-Max (toff) :

196ns

RoHS Status :

ROHS3 Compliant

Current :

105A

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

125W Tc

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Rise Time :

10ns

Rds On (Max) @ Id, Vgs :

550m Ω @ 5.3A, 10V