IRF740
- Mfr.Part #
- IRF740
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A TO220AB
- Stock
- 39,509
- In Stock :
- 39,509
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 10A
- Operating Temperature :
- -65°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Number of Elements :
- 1
- Base Part Number :
- IRF7
- Mount :
- Through Hole
- Turn Off Time-Max (toff) :
- 196ns
- HTS Code :
- 8541.29.00.95
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation :
- 125W
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Current Rating :
- 10A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.55Ohm
- Drain to Source Breakdown Voltage :
- 400V
- Voltage - Rated DC :
- 400V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Contains Lead
- Avalanche Energy Rating (Eas) :
- 520 mJ
- Voltage :
- 400V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Transistor Application :
- SWITCHING
- Turn On Time-Max (ton) :
- 79ns
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Series :
- PowerMESH™ II
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 5.3A, 10V
- Current :
- 105A
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 125W Tc
- Feedback Cap-Max (Crss) :
- 120 pF
- Additional Feature :
- HIGH VOLTAGE, FAST SWITCHING
- Package / Case :
- TO-220-3
- Rise Time :
- 10ns
- Datasheets
- IRF740
N-Channel Tube 550m Ω @ 5.3A, 10V ±20V 1400pF @ 25V 43nC @ 10V TO-220-3
:
The IRF740 is a high-voltage N-channel MOSFET that is primarily used in high-voltage, high-speed switching applications. This transistor can handle a maximum load voltage of 400V. The Mosfet can switch loads consuming up to 10A when a gate threshold voltage of 10V is applied across the Gate and Source pins. Because mosfets are meant to switch high current, high voltage loads, they have a rather high gate voltage and hence cannot be utilized directly with a CPU's I/O pin. The IRF740 Mosfet has a high on-resistance (RDS) of roughly 0.55 ohms, which is a significant drawback. As a result, this mosfet cannot be used in applications that require high switching efficiency. But it can work as an amplifier and it can be used in many types of audio amplifier circuits.
IRF740 Features
:
Package Type: TO-220
Transistor Type: N Channel
Rise time and fall time is 27nS and 24nS
Drain Source Resistance (RDS) is 0.55 Ohms
Max Breakdown Voltage from Drain to Source: 400V
Max Gate to Source Voltage Should Be: ±20V
Max Continues Drain Current is : 10A
Max Pulsed Drain Current is: 40A
Max Power Dissipation is: 125W
Minimum Voltage Required to Conduct: 2V to 4V
Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
IRF740 Applications
:
UPS
Inverter Circuits
DC-DC Converters
Battery charger circuits
LED dimmers or flashers
High voltage applications
Lighting and ballast circuits
High Speed switching applications
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