IRF7353D2TRPBF
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- Mfr.Part #
- IRF7353D2TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.5A 8SO
- Stock
- 27,471
- In Stock ：
- 27,471
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Rds On Max :
- 29 mΩ
- Rise Time :
- 8.9ns
- Continuous Drain Current (ID) :
- 6.5A
- Length :
- 4.9784mm
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 25V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Turn-Off Delay Time :
- 26 ns
- Lead Free :
- Lead Free
- Published :
- 2004
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Drain to Source Breakdown Voltage :
- 30V
- Width :
- 3.9878mm
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 2W Ta
- Supplier Device Package :
- 8-SO
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 30V
- Turn On Delay Time :
- 8.1 ns
- Series :
- FETKY™
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 6.5A
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- Max Operating Temperature :
- 150°C
- Power Dissipation :
- 2W
- FET Feature :
- Schottky Diode (Isolated)
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Height :
- 1.4986mm
- Input Capacitance :
- 650pF
- Rds On (Max) @ Id, Vgs :
- 29mOhm @ 5.8A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Drain to Source Resistance :
- 46mOhm
- Fall Time (Typ) :
- 18 ns
- Datasheets
- IRF7353D2TRPBF
N-Channel Tape & Reel (TR) 29mOhm @ 5.8A, 10V ±20V 650pF @ 25V 33nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7353D2TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 650pF @ 25V.This device conducts a continuous drain current (ID) of 6.5A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 26 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 46mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.1 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF7353D2TRPBF Features
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 46mOhm
a 30V drain to source voltage (Vdss)
IRF7353D2TRPBF Applications
There are a lot of Infineon Technologies
IRF7353D2TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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