IRF7353D2PBF
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- Mfr.Part #
- IRF7353D2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.5A 8SO
- Stock
- 6,886
- In Stock ：
- 6,886
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 30V
- Width :
- 3.9878mm
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- Current Rating :
- 6.5A
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 2W Ta
- Series :
- FETKY™
- Rds On Max :
- 29 mΩ
- Drain to Source Voltage (Vdss) :
- 30V
- Published :
- 2004
- Height :
- 1.4986mm
- Radiation Hardening :
- No
- Input Capacitance :
- 650pF
- Drain to Source Resistance :
- 46mOhm
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 29mOhm @ 5.8A, 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 8.9ns
- Number of Pins :
- 8
- Fall Time (Typ) :
- 18 ns
- FET Type :
- N-Channel
- FET Feature :
- Schottky Diode (Isolated)
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Max Operating Temperature :
- 150°C
- Length :
- 4.9784mm
- Continuous Drain Current (ID) :
- 6.5A
- Voltage - Rated DC :
- 30V
- Turn-Off Delay Time :
- 26 ns
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- 8-SO
- Turn On Delay Time :
- 8.1 ns
- Power Dissipation :
- 2W
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- IRF7353D2PBF
N-Channel Tube 29mOhm @ 5.8A, 10V ±20V 650pF @ 25V 33nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7353D2PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 650pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26 ns.This device has a drain-to-source resistance of 46mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.1 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRF7353D2PBF Features
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 46mOhm
a 30V drain to source voltage (Vdss)
IRF7353D2PBF Applications
There are a lot of Infineon Technologies
IRF7353D2PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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