IRF7353D1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.9878mm

Continuous Drain Current (ID) :

6.5A

Max Forward Surge Current (Ifsm) :

11A

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Min Operating Temperature :

-55°C

Nominal Vgs :

1 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Dual Supply Voltage :

30V

Voltage - Rated DC :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

8.1 ns

Forward Voltage :

390mV

Power Dissipation-Max :

2W Ta

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

650pF

Power Dissipation :

20W

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Published :

2004

Forward Current :

2.7A

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

32mOhm @ 5.8A, 10V

Mount :

Surface Mount

Drain to Source Resistance :

46mOhm

Height :

1.4986mm

Series :

FETKY™

Threshold Voltage :

1V

Drain to Source Voltage (Vdss) :

30V

Supplier Device Package :

8-SO

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Fall Time (Typ) :

17 ns

Number of Elements :

1

Turn-Off Delay Time :

26 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Rds On Max :

32 mΩ

Rise Time :

8.9ns

Length :

4.9784mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Current Rating :

6.5A

Drain to Source Breakdown Voltage :

30V

FET Feature :

Schottky Diode (Isolated)

Vgs (Max) :

±20V

Packaging :

Tube