IRF7342D2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Dual Supply Voltage :

-55V

Drain to Source Voltage (Vdss) :

55V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

22 ns

Termination :

SMD/SMT

Voltage - Rated DC :

-55V

Mounting Type :

Surface Mount

Width :

3.9878mm

Power Dissipation-Max :

2W Ta

Configuration :

Single

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

43 ns

Power Dissipation :

2W

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Mount :

Surface Mount

Series :

FETKY™

Resistance :

105mOhm

Vgs (Max) :

±20V

Rise Time :

10ns

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-1 V

FET Feature :

Schottky Diode (Isolated)

Drain to Source Breakdown Voltage :

-55V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Current Rating :

-3.4A

Threshold Voltage :

-1V

Vgs(th) (Max) @ Id :

1V @ 250μA

ECCN Code :

EAR99

Number of Elements :

1

Length :

4.9784mm

Height :

1.4986mm

Turn On Delay Time :

14 ns

Continuous Drain Current (ID) :

-3.4A

FET Type :

P-Channel

Radiation Hardening :

No