IRF7331TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

7A

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.2V @ 250µA

DS Breakdown Voltage-Min :

20V

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PDSO-G8

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

7A

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 16V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Power - Max :

2W

FET Type :

2 N-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.03Ohm