IRF7326D2TRPBF
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- Mfr.Part #
- IRF7326D2TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 3.6A 8SO
- Stock
- 4,810
- In Stock ：
- 4,810
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Ta
- Published :
- 2004
- Drain to Source Breakdown Voltage :
- -30V
- Power Dissipation :
- 2W
- Current Rating :
- -3.6A
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 440pF
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 1.8A, 10V
- RoHS Status :
- RoHS Compliant
- FET Type :
- P-Channel
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 30V
- Drain to Source Resistance :
- 160mOhm
- Continuous Drain Current (ID) :
- -3.6A
- Rds On Max :
- 100 mΩ
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- 8-SO
- Number of Pins :
- 8
- FET Feature :
- Schottky Diode (Isolated)
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Max Operating Temperature :
- 150°C
- Voltage - Rated DC :
- -30V
- Series :
- FETKY™
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2W Ta
- Datasheets
- IRF7326D2TRPBF
P-Channel Tape & Reel (TR) 100mOhm @ 1.8A, 10V ±20V 440pF @ 25V 25nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7326D2TRPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 440pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -3.6A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 160mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF7326D2TRPBF Features
a continuous drain current (ID) of -3.6A
a drain-to-source breakdown voltage of -30V voltage
single MOSFETs transistor is 160mOhm
a 30V drain to source voltage (Vdss)
IRF7326D2TRPBF Applications
There are a lot of Infineon Technologies
IRF7326D2TRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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