IRF7324D1TRPBF
- Mfr.Part #
- IRF7324D1TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2.2A 8SO
- Stock
- 3,066
- In Stock :
- 3,066
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Current Rating :
- -2.9A
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 4.5V
- Drain to Source Breakdown Voltage :
- -20V
- Min Operating Temperature :
- -55°C
- Published :
- 2004
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 15V
- Rds On Max :
- 270 mΩ
- Continuous Drain Current (ID) :
- 2.2A
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Series :
- FETKY™
- Power Dissipation :
- 2W
- FET Feature :
- Schottky Diode (Isolated)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 270mOhm @ 1.2A, 4.5V
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 270mOhm
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- Input Capacitance :
- 260pF
- Vgs (Max) :
- ±12V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- P-Channel
- Voltage - Rated DC :
- -20V
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 12V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 2W Ta
- Drain to Source Voltage (Vdss) :
- 20V
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- 8-SO
- Max Operating Temperature :
- 150°C
- Datasheets
- IRF7324D1TRPBF

P-Channel Tape & Reel (TR) 270mOhm @ 1.2A, 4.5V ±12V 260pF @ 15V 7.8nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7324D1TRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 260pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -20V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 270mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.7V 4.5V).
IRF7324D1TRPBF Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of -20V voltage
single MOSFETs transistor is 270mOhm
a 20V drain to source voltage (Vdss)
IRF7324D1TRPBF Applications
There are a lot of Infineon Technologies
IRF7324D1TRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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