IRF7321D2TRPBF
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- Mfr.Part #
- IRF7321D2TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 4.7A 8SO
- Stock
- 8,101
- In Stock ：
- 8,101
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 4.9784mm
- FET Feature :
- Schottky Diode (Isolated)
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -30V
- Resistance :
- 62mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Power Dissipation :
- 2W
- Turn On Delay Time :
- 13 ns
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 62m Ω @ 4.9A, 10V
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 4.7A
- Drain to Source Voltage (Vdss) :
- 30V
- Series :
- FETKY™
- Height :
- 1.4986mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 710pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -4.7A
- Current - Continuous Drain (Id) @ 25°C :
- 4.7A Ta
- Turn-Off Delay Time :
- 34 ns
- Element Configuration :
- Single
- Fall Time (Typ) :
- 32 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Breakdown Voltage :
- -30V
- Lead Free :
- Lead Free
- Published :
- 2004
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 2W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.9878mm
- Rise Time :
- 13ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Mount :
- Surface Mount
- Datasheets
- IRF7321D2TRPBF
P-Channel Tape & Reel (TR) 62m Ω @ 4.9A, 10V ±20V 710pF @ 25V 34nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7321D2TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 710pF @ 25V.This device conducts a continuous drain current (ID) of 4.7A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 34 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF7321D2TRPBF Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 34 ns
a 30V drain to source voltage (Vdss)
IRF7321D2TRPBF Applications
There are a lot of Infineon Technologies
IRF7321D2TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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