IRF730STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2016

JESD-609 Code :

e3

Power Dissipation-Max :

3.1W Ta 74W Tc

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

22A

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.3A, 10V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

400V

Avalanche Energy Rating (Eas) :

290 mJ

Pbfree Code :

yes

Continuous Drain Current (ID) :

5.5A

Number of Terminations :

2

Turn-Off Delay Time :

38 ns

Drain-source On Resistance-Max :

1Ohm

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Weight :

1.437803g

Height :

4.83mm

Turn On Delay Time :

10 ns

Length :

10.67mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

3.1W

Transistor Application :

SWITCHING

Fall Time (Typ) :

14 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Rise Time :

15ns

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Width :

9.65mm