IRF730BPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

12 ns

Rise Time :

11ns

Package / Case :

TO-220-3

Turn-Off Delay Time :

14 ns

Terminal Finish :

MATTE TIN OVER NICKEL

Continuous Drain Current (ID) :

6A

Mounting Type :

Through Hole

Published :

2013

Transistor Element Material :

SILICON

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

6A

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Terminal Position :

Single

Power Dissipation-Max :

104W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

8 ns

Number of Elements :

1

Number of Terminations :

3

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Avalanche Energy Rating (Eas) :

104 mJ

Transistor Application :

SWITCHING

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

1 Ω @ 3A, 10V

DS Breakdown Voltage-Min :

400V

Drain to Source Voltage (Vdss) :

400V

Input Capacitance (Ciss) (Max) @ Vds :

311pF @ 100V

Drain-source On Resistance-Max :

1Ohm

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

13A