IRF730APBF
- Mfr.Part #
- IRF730APBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 5.5A TO220AB
- Stock
- 35,606
- In Stock :
- 35,606
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Input Capacitance :
- 600pF
- Power Dissipation :
- 74W
- Continuous Drain Current (ID) :
- 5.5A
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Current Rating :
- 5.5A
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Weight :
- 6.000006g
- Published :
- 2008
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Width :
- 4.7mm
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 74W Tc
- Drain to Source Breakdown Voltage :
- 400V
- Package / Case :
- TO-220-3
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Rds On Max :
- 1 Ω
- Height :
- 9.01mm
- Turn-Off Delay Time :
- 20 ns
- Length :
- 10.41mm
- Factory Lead Time :
- 12 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Threshold Voltage :
- 4.5V
- Drain to Source Resistance :
- 1Ohm
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Fall Time (Typ) :
- 16 ns
- Resistance :
- 1Ohm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Nominal Vgs :
- 4.5 V
- Voltage - Rated DC :
- 400V
- Lead Free :
- Lead Free
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- REACH SVHC :
- Unknown
- Recovery Time :
- 550 ns
- Drain to Source Voltage (Vdss) :
- 400V
- Rise Time :
- 22ns
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 25V
- Turn On Delay Time :
- 10 ns
- Supplier Device Package :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 3.3A, 10V
- Datasheets
- IRF730APBF
N-Channel Tube 1Ohm @ 3.3A, 10V ±30V 600pF @ 25V 22nC @ 10V 400V TO-220-3
IRF730APBF Description
The IRF730APBF is a Power MOSFET. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.
IRF730APBF Features
-
Fully Characterized Capacitance and Avalanche Voltage and Current
-
Effective Coss Specified
-
Compliant to RoHS Directive 2002/95/EC
-
Low Gate Charge Qg results in Simple Drive Requirement
-
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
IRF730APBF Applications
-
Switch Mode Power Supply (SMPS)
-
Uninterruptible Power Supply
-
High Speed Power Switching
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