IRF7241TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-40V

Element Configuration :

Single

Power Dissipation :

2.5W

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Resistance :

41mOhm

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Current Rating :

-6.2A

Length :

4.9784mm

Width :

3.9878mm

Recovery Time :

48 ns

ECCN Code :

EAR99

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

-6.2A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

1.4986mm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

41m Ω @ 6.2A, 10V

Turn On Delay Time :

24 ns

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Published :

2004

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Turn-Off Delay Time :

210 ns

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

-3 V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Contains Lead, Lead Free

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Power Dissipation-Max :

2.5W Ta

Packaging :

Tape and Reel (TR)

Rise Time :

280ns

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

100 ns

Number of Pins :

8

FET Type :

P-Channel

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Threshold Voltage :

-3V

REACH SVHC :

No SVHC

Dual Supply Voltage :

-40V

Drain to Source Breakdown Voltage :

-40V