IRF7220TRPBF
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- Mfr.Part #
- IRF7220TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 14V 11A 8SO
- Stock
- 9,490
- In Stock ：
- 9,490
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 3.9878mm
- Voltage - Rated DC :
- -14V
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 1.04 μs
- Continuous Drain Current (ID) :
- -11A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA
- REACH SVHC :
- No SVHC
- Resistance :
- 12mOhm
- Drain to Source Resistance :
- 12mOhm
- Nominal Vgs :
- -600 mV
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±12V
- Rise Time :
- 420ns
- FET Type :
- P-Channel
- Current Rating :
- -11A
- Power Dissipation-Max :
- 2.5W Ta
- Length :
- 4.9784mm
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- -14V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Published :
- 2004
- Number of Pins :
- 8
- Input Capacitance :
- 8.075nF
- Rds On (Max) @ Id, Vgs :
- 12mOhm @ 11A, 4.5V
- Gate to Source Voltage (Vgs) :
- 12V
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 19 ns
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 140 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Series :
- HEXFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 8075pF @ 10V
- Height :
- 1.4986mm
- Supplier Device Package :
- 8-SO
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Drain to Source Voltage (Vdss) :
- 14V
- Power Dissipation :
- 2.5W
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 5V
- Rds On Max :
- 12 mΩ
- Datasheets
- IRF7220TRPBF
P-Channel Tape & Reel (TR) 12mOhm @ 11A, 4.5V ±12V 8075pF @ 10V 125nC @ 5V 14V 8-SOIC (0.154, 3.90mm Width)
IRF7220TRPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8075pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -11A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-14V. And this device has -14V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 140 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 12mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Operating this transistor requires a 14V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.
IRF7220TRPBF Features
a continuous drain current (ID) of -11A
a drain-to-source breakdown voltage of -14V voltage
the turn-off delay time is 140 ns
single MOSFETs transistor is 12mOhm
a 14V drain to source voltage (Vdss)
IRF7220TRPBF Applications
There are a lot of Infineon Technologies
IRF7220TRPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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