IRF7220TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

-600 mV

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

12mOhm

Max Operating Temperature :

150°C

Supplier Device Package :

8-SO

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 5V

Resistance :

12mOhm

Input Capacitance :

8.075nF

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Power Dissipation-Max :

2.5W Ta

Length :

4.9784mm

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

14V

Number of Pins :

8

Rise Time :

420ns

Drain to Source Breakdown Voltage :

-14V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Fall Time (Typ) :

1.04 μs

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Number of Elements :

1

Turn On Delay Time :

19 ns

Width :

3.9878mm

Power Dissipation :

2.5W

REACH SVHC :

No SVHC

Published :

2004

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-14V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Input Capacitance (Ciss) (Max) @ Vds :

8075pF @ 10V

Rds On (Max) @ Id, Vgs :

12mOhm @ 11A, 4.5V

Height :

1.4986mm

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

12V

Rds On Max :

12 mΩ

Continuous Drain Current (ID) :

-11A

Vgs (Max) :

±12V

Current Rating :

-11A

Vgs(th) (Max) @ Id :

600mV @ 250μA

Turn-Off Delay Time :

140 ns

FET Type :

P-Channel