IRF7220

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

11A

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

8075pF @ 10V

Surface Mount :

No

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±12V

DS Breakdown Voltage-Min :

400V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Published :

1999

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta

Drain to Source Voltage (Vdss) :

14V

Number of Terminations :

3

Number of Elements :

1

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

600mV @ 250μA

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

12m Ω @ 11A, 4.5V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form :

THROUGH-HOLE

FET Type :

P-Channel

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 5V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

2.8A

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain-source On Resistance-Max :

2.5Ohm