IRF7210PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.4986mm

Drain to Source Breakdown Voltage :

-12V

Supplier Device Package :

8-SO

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Published :

2004

Max Operating Temperature :

150°C

Resistance :

7mOhm

Drain to Source Resistance :

7mOhm

Number of Pins :

8

Vgs (Max) :

±12V

Recovery Time :

247 ns

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Vgs(th) (Max) @ Id :

600mV @ 500μA

Power Dissipation :

2.5W

Dual Supply Voltage :

12V

Drain to Source Voltage (Vdss) :

12V

Packaging :

Tube

Rise Time :

3ns

Number of Elements :

1

Nominal Vgs :

600 mV

Continuous Drain Current (ID) :

-16A

Turn-Off Delay Time :

6.5 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

12V

Length :

4.9784mm

Gate Charge (Qg) (Max) @ Vgs :

212nC @ 5V

Turn On Delay Time :

50 ns

Rds On Max :

7 mΩ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Threshold Voltage :

600mV

Mount :

Surface Mount

Width :

3.9878mm

RoHS Status :

RoHS Compliant

Input Capacitance :

17.179nF

Input Capacitance (Ciss) (Max) @ Vds :

17179pF @ 10V

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

7mOhm @ 16A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Fall Time (Typ) :

30 ns

Power Dissipation-Max :

2.5W Ta

Lead Free :

Lead Free

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Series :

HEXFET®