IRF720S
- Mfr.Part #
- IRF720S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 3.3A D2PAK
- Stock
- 5,522
- In Stock :
- 5,522
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 410pF
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Number of Pins :
- 3
- Power Dissipation :
- 50W
- Vgs (Max) :
- ±20V
- Rds On Max :
- 1.8 Ω
- Lead Free :
- Contains Lead
- Input Capacitance (Ciss) (Max) @ Vds :
- 410pF @ 25V
- Drain to Source Voltage (Vdss) :
- 400V
- Turn-Off Delay Time :
- 30 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Resistance :
- 1.8Ohm
- RoHS Status :
- Non-RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- D2PAK
- Published :
- 2017
- Drain to Source Breakdown Voltage :
- 400V
- Rise Time :
- 14ns
- Rds On (Max) @ Id, Vgs :
- 1.8Ohm @ 2A, 10V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 3.3A
- Weight :
- 1.437803g
- Power Dissipation-Max :
- 3.1W Ta 50W Tc
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Tc
- Turn On Delay Time :
- 10 ns
- Voltage - Rated DC :
- 400V
- Width :
- 9.65mm
- Length :
- 10.67mm
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 4.83mm
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 13 ns
- Current Rating :
- 3.3A
- Packaging :
- Tube
- Datasheets
- IRF720S
N-Channel Tube 1.8Ohm @ 2A, 10V ±20V 410pF @ 25V 20nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF720S Overview
A device's maximal input capacitance is 410pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 400V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.8Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF720S Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a 400V drain to source voltage (Vdss)
IRF720S Applications
There are a lot of Vishay Siliconix
IRF720S applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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