IRF7207TRPBF
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- Mfr.Part #
- IRF7207TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 5.4A 8SO
- Stock
- 46,892
- In Stock ：
- 46,892
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- Rise Time :
- 24ns
- FET Type :
- P-Channel
- Supplier Device Package :
- 8-SO
- Power Dissipation :
- 2.5W
- Mount :
- Surface Mount
- Published :
- 2004
- Input Capacitance (Ciss) (Max) @ Vds :
- 780pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 4.5V
- Vgs (Max) :
- ±12V
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance :
- 780pF
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tc
- Power Dissipation-Max :
- 2.5W Tc
- Resistance :
- 60mOhm
- Current Rating :
- -5.4A
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 8
- Rds On Max :
- 60 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Drain to Source Resistance :
- 60mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Drain to Source Breakdown Voltage :
- -20V
- Voltage - Rated DC :
- -20V
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 5.4A, 4.5V
- Gate to Source Voltage (Vgs) :
- 12V
- Continuous Drain Current (ID) :
- 5.4A
- Datasheets
- IRF7207TRPBF
P-Channel Tape & Reel (TR) 60mOhm @ 5.4A, 4.5V ±12V 780pF @ 15V 22nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7207TRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 780pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.This device has a drain-to-source resistance of 60mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.7V 4.5V), this device contributes to a reduction in overall power consumption.
IRF7207TRPBF Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of -20V voltage
single MOSFETs transistor is 60mOhm
a 20V drain to source voltage (Vdss)
IRF7207TRPBF Applications
There are a lot of Infineon Technologies
IRF7207TRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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