IRF7207PBF
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- Mfr.Part #
- IRF7207PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 5.4A 8SO
- Stock
- 12,053
- In Stock ：
- 12,053
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Breakdown Voltage :
- -20V
- Supplier Device Package :
- 8-SO
- Rise Time :
- 24ns
- Number of Pins :
- 8
- Fall Time (Typ) :
- 41 ns
- Number of Elements :
- 1
- Turn On Delay Time :
- 11 ns
- Threshold Voltage :
- -700mV
- Series :
- HEXFET®
- Drain to Source Voltage (Vdss) :
- 20V
- Rds On Max :
- 60 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 4.5V
- REACH SVHC :
- No SVHC
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Published :
- 2004
- Input Capacitance (Ciss) (Max) @ Vds :
- 780pF @ 15V
- Power Dissipation :
- 2.5W
- Continuous Drain Current (ID) :
- -5.4A
- Gate to Source Voltage (Vgs) :
- 12V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 5.4A, 4.5V
- RoHS Status :
- RoHS Compliant
- Min Operating Temperature :
- -55°C
- Current Rating :
- -5.4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -20V
- Input Capacitance :
- 780pF
- Turn-Off Delay Time :
- 43 ns
- Vgs (Max) :
- ±12V
- Drain to Source Resistance :
- 60mOhm
- Packaging :
- Tube
- Datasheets
- IRF7207PBF
P-Channel Tube 60mOhm @ 5.4A, 4.5V ±12V 780pF @ 15V 22nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7207PBF Overview
The maximum input capacitance of this device is 780pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -5.4A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 43 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 60mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -700mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.7V 4.5V), this device helps reduce its power consumption.
IRF7207PBF Features
a continuous drain current (ID) of -5.4A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 43 ns
single MOSFETs transistor is 60mOhm
a threshold voltage of -700mV
a 20V drain to source voltage (Vdss)
IRF7207PBF Applications
There are a lot of Infineon Technologies
IRF7207PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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