IRF7207

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.06Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

5.4A

Avalanche Energy Rating (Eas) :

140 mJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±12V

Surface Mount :

yes

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

MS-012AA

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 15V

Number of Terminations :

8

DS Breakdown Voltage-Min :

20V

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

43A

JESD-30 Code :

R-PDSO-G8

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2000

Number of Elements :

1

Power Dissipation-Max :

2.5W Tc

Vgs(th) (Max) @ Id :

700mV @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

60m Ω @ 5.4A, 4.5V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Terminal Form :

Gull wing

Terminal Position :

Dual

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount