IRF7207

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

140 mJ

Vgs (Max) :

±12V

Drain Current-Max (Abs) (ID) :

5.4A

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

60m Ω @ 5.4A, 4.5V

Vgs(th) (Max) @ Id :

700mV @ 250μA

Series :

HEXFET®

FET Type :

P-Channel

JEDEC-95 Code :

MS-012AA

Published :

2000

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Transistor Application :

SWITCHING

Packaging :

Tube

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.06Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

DS Breakdown Voltage-Min :

20V

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

2.5W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

43A

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)