IRF7204TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation :

2.5W

Continuous Drain Current (ID) :

-5.3A

Turn On Delay Time :

14 ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

60m Ω @ 5.3A, 10V

Fall Time (Typ) :

68 ns

Height :

1.4986mm

Terminal Position :

Dual

Series :

HEXFET®

Nominal Vgs :

-2.5 V

Width :

3.9878mm

Number of Pins :

8

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 10V

Mount :

Surface Mount

Element Configuration :

Single

Recovery Time :

100 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

12V

Voltage - Rated DC :

-20V

Turn-Off Delay Time :

100 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs (Max) :

±12V

Length :

4.9784mm

REACH SVHC :

No SVHC

Current Rating :

-5.3A

Power Dissipation-Max :

2.5W Tc

RoHS Status :

ROHS3 Compliant

Published :

1997

Drain to Source Voltage (Vdss) :

20V

Dual Supply Voltage :

-20V

Threshold Voltage :

-2.5V

Lead Free :

Contains Lead, Lead Free

Resistance :

60mOhm

Drain to Source Breakdown Voltage :

-20V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rise Time :

26ns

Number of Terminations :

8

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Output Current :

5.3A