IRF7204TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Drain-source On Resistance-Max :

0.06Ohm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

8

JESD-30 Code :

R-PDSO-G8

Drain Current-Max (Abs) (ID) :

5.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

20V

Surface Mount :

yes

Published :

1997

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

60m Ω @ 5.3A, 10V

Series :

HEXFET®

Number of Elements :

1