IRF7204PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1997

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

60m Ω @ 5.3A, 10V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Number of Elements :

1

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

ECCN Code :

EAR99

Series :

HEXFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

JEDEC-95 Code :

MS-012AA

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

21A

Drain-source On Resistance-Max :

0.06Ohm

Power Dissipation-Max :

2.5W Tc

Drain Current-Max (Abs) (ID) :

5.3A

DS Breakdown Voltage-Min :

20V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 250μA