IRF7204

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Tc

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.06Ohm

Peak Reflow Temperature (Cel) :

245

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

5.3A

Terminal Form :

Gull wing

ECCN Code :

EAR99

JESD-609 Code :

e0

JESD-30 Code :

R-PDSO-G8

Packaging :

Tube

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

HTS Code :

8541.29.00.95

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±12V

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 10V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

60m Ω @ 5.3A, 10V

DS Breakdown Voltage-Min :

20V

Series :

HEXFET®

Number of Terminations :

8

Terminal Finish :

Tin/Lead (Sn/Pb)

FET Type :

P-Channel