IRF7201PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.03Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.3A, 10V

Surface Mount :

yes

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Avalanche Energy Rating (Eas) :

70 mJ

JEDEC-95 Code :

MS-012AA

Drain Current-Max (Abs) (ID) :

7.3A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

58A

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Elements :

1

Series :

HEXFET®

Packaging :

Tube

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

2.5W Tc

Published :

2003