IRF7201

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.3A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

ULTRA LOW RESISTANCE

Pulsed Drain Current-Max (IDM) :

58A

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.03Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Terminal Position :

Dual

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

FET Type :

N-Channel

Packaging :

Tube

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

70 mJ

Drain Current-Max (Abs) (ID) :

7.3A

Published :

1998

JEDEC-95 Code :

MS-012AA

Number of Elements :

1

Series :

HEXFET®

Power Dissipation-Max :

2.5W Tc

Number of Terminations :

8

JESD-30 Code :

R-PDSO-G8

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V