IRF5806TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

594pF @ 15V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Height :

1mm

Power Dissipation-Max :

2W Ta

Published :

2005

Lead Free :

Lead Free

Nominal Vgs :

-1.2 V

Turn-Off Delay Time :

94 ns

Number of Elements :

1

FET Type :

P-Channel

Turn On Delay Time :

6.2 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs :

86m Ω @ 4A, 4.5V

Radiation Hardening :

No

Continuous Drain Current (ID) :

-4A

Resistance :

86mOhm

Rise Time :

27ns

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Dual Supply Voltage :

-20V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

11.4nC @ 4.5V

REACH SVHC :

No SVHC

Factory Lead Time :

18 Weeks

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

6

Fall Time (Typ) :

126 ns

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Threshold Voltage :

-1.2V

Mount :

Surface Mount

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Termination :

SMD/SMT

Length :

3.1mm

Drain to Source Breakdown Voltage :

-20V

Drain Current-Max (Abs) (ID) :

4A

Width :

1.7mm