IRF5805

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Drain-source On Resistance-Max :

0.098Ohm

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

15A

FET Type :

P-Channel

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

511pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Terminal Position :

Dual

Number of Elements :

1

Operating Temperature (Max) :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

3.8A

DS Breakdown Voltage-Min :

30V

Published :

2003

Power Dissipation-Max :

2W Ta

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G6

Rds On (Max) @ Id, Vgs :

98m Ω @ 3.8A, 10V