IRF5804TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Vgs (Max) :

±20V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Termination :

SMD/SMT

Dual Supply Voltage :

-40V

FET Type :

P-Channel

Rds On Max :

198 mΩ

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2W Ta

Max Operating Temperature :

150°C

Power Dissipation :

2W

Number of Elements :

1

Drain to Source Resistance :

334mOhm

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Continuous Drain Current (ID) :

-2.5A

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-40V

Threshold Voltage :

-3V

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

198mOhm @ 2.5A, 10V

Input Capacitance :

680pF

Supplier Device Package :

Micro6™(TSOP-6)

Nominal Vgs :

-3 V

REACH SVHC :

No SVHC

Published :

2010

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Drain to Source Voltage (Vdss) :

40V