IRF5803D2PBF
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- Mfr.Part #
- IRF5803D2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 3.4A 8SO
- Stock
- 12,090
- In Stock ：
- 12,090
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 190mOhm
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rise Time :
- 550ns
- Turn On Delay Time :
- 43 ns
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Ta
- Drain to Source Breakdown Voltage :
- -40V
- FET Feature :
- Schottky Diode (Isolated)
- Series :
- FETKY™
- Voltage - Rated DC :
- -40V
- Drain to Source Voltage (Vdss) :
- 40V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1110pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 112mOhm @ 3.4A, 10V
- Input Capacitance :
- 1.11nF
- Power Dissipation :
- 2W
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Rds On Max :
- 112 mΩ
- Number of Pins :
- 8
- Power Dissipation-Max :
- 2W Ta
- Width :
- 4mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Height :
- 1.5mm
- Length :
- 5mm
- Continuous Drain Current (ID) :
- -3.4A
- Published :
- 2004
- RoHS Status :
- RoHS Compliant
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Supplier Device Package :
- 8-SO
- Mounting Type :
- Surface Mount
- Current Rating :
- -3.4A
- Fall Time (Typ) :
- 50 ns
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 88 ns
- Datasheets
- IRF5803D2PBF
P-Channel Tube 112mOhm @ 3.4A, 10V ±20V 1110pF @ 25V 37nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width)
IRF5803D2PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1110pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -3.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-40V. And this device has -40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 88 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 190mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 43 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRF5803D2PBF Features
a continuous drain current (ID) of -3.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 88 ns
single MOSFETs transistor is 190mOhm
a 40V drain to source voltage (Vdss)
IRF5803D2PBF Applications
There are a lot of Infineon Technologies
IRF5803D2PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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