IRF5803

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.112Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

MO-193AA

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Operating Temperature (Max) :

150°C

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Packaging :

Tube

JESD-30 Code :

R-PDSO-G6

Qualification Status :

Not Qualified

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

40V

Published :

2001

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 25V

Rds On (Max) @ Id, Vgs :

112m Ω @ 3.4A, 10V

DS Breakdown Voltage-Min :

40V

Power Dissipation-Max :

2W Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

27A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Type :

P-Channel

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

3.4A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Series :

HEXFET®

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE