IRF540ZSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Published :

2010

Number of Elements :

1

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

120 mJ

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

92W Tc

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0265Ohm

Transistor Application :

SWITCHING

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

36A

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 22A, 10V

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

140A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V