IRF540ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

92W

Dual Supply Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

39 ns

Transistor Element Material :

SILICON

Threshold Voltage :

4V

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Length :

10.668mm

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Packaging :

Tube

Mount :

Surface Mount

Published :

2003

FET Type :

N-Channel

Series :

HEXFET®

Continuous Drain Current (ID) :

36A

JESD-609 Code :

e3

Radiation Hardening :

No

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Elements :

1

Number of Pins :

3

ECCN Code :

EAR99

Voltage - Rated DC :

100V

Width :

9.65mm

Recovery Time :

50 ns

Rise Time :

51ns

Transistor Application :

SWITCHING

Number of Terminations :

2

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

4 V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

9 Weeks

Height :

4.826mm

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

26.5mOhm

Current Rating :

36A

Turn On Delay Time :

15 ns

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 22A, 10V

Power Dissipation-Max :

92W Tc

Turn-Off Delay Time :

43 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Lead Free :

Contains Lead, Lead Free