IRF540NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

Package / Case :

TO-220-3

Series :

HEXFET®

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Dual Supply Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Mounting Type :

Through Hole

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Width :

4.69mm

Current Rating :

27A

Height :

8.77mm

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Voltage - Rated DC :

100V

Length :

10.54mm

Element Configuration :

Single

Termination :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

250

Factory Lead Time :

12 Weeks

Mount :

Through Hole

Additional Feature :

High Reliability

Number of Terminations :

3

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Published :

1997

Nominal Vgs :

4 V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Packaging :

Tube

Resistance :

44mOhm

Radiation Hardening :

No

Lead Pitch :

2.54mm

Turn On Delay Time :

11 ns

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

130W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

33A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

44m Ω @ 16A, 10V

Recovery Time :

170 ns

Number of Pins :

3

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

35 ns

Power Dissipation :

130W

Rise Time :

35ns

Turn-Off Delay Time :

39 ns

Transistor Application :

SWITCHING