IRF530PBF
- Mfr.Part #
- IRF530PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 14A TO220AB
- Stock
- 14,833
- In Stock :
- 14,833
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 100V
- Radiation Hardening :
- No
- Threshold Voltage :
- 4V
- Input Capacitance :
- 670pF
- Nominal Vgs :
- 4 V
- Rds On (Max) @ Id, Vgs :
- 160mOhm @ 8.4A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Recovery Time :
- 280 ns
- Drain to Source Resistance :
- 270mOhm
- Fall Time (Typ) :
- 20 ns
- Resistance :
- 160mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Power Dissipation-Max :
- 88W Tc
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Rise Time :
- 30ns
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- REACH SVHC :
- Unknown
- Current Rating :
- 14A
- Weight :
- 6.000006g
- Number of Channels :
- 1
- Published :
- 2004
- Supplier Device Package :
- TO-220AB
- Termination :
- Through Hole
- Voltage - Rated DC :
- 100V
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Dual Supply Voltage :
- 100V
- Turn On Delay Time :
- 10 ns
- Power Dissipation :
- 88W
- Turn-Off Delay Time :
- 23 ns
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Drain to Source Breakdown Voltage :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.41mm
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Rds On Max :
- 160 mΩ
- Height :
- 9.01mm
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 175°C
- Width :
- 4.7mm
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 14A
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IRF530PBF
N-Channel Tube 160mOhm @ 8.4A, 10V ±20V 670pF @ 25V 26nC @ 10V 100V TO-220-3
IRF530PBF Overview
A device's maximal input capacitance is 670pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 270mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF530PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IRF530PBF Applications
There are a lot of Vishay Siliconix
IRF530PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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