IRF530NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Junction Temperature (Tj) :

175°C

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Element Configuration :

Single

Turn On Delay Time :

9.2 ns

Length :

10.668mm

Lead Free :

Contains Lead, Lead Free

Published :

2004

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Drain to Source Breakdown Voltage :

100V

Operating Temperature :

-55°C~175°C TJ

Current Rating :

17A

Fall Time (Typ) :

25 ns

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Dual Supply Voltage :

100V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Case Connection :

DRAIN

Radiation Hardening :

No

Recovery Time :

140 ns

Turn-Off Delay Time :

35 ns

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

90m Ω @ 9A, 10V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Number of Pins :

3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

17A

Mount :

Surface Mount

Resistance :

90mOhm

Width :

9.65mm

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Termination :

SMD/SMT

Voltage - Rated DC :

100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

JESD-609 Code :

e3

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

3.8W

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Transistor Application :

SWITCHING

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Nominal Vgs :

4 V

Pulsed Drain Current-Max (IDM) :

60A

Series :

HEXFET®

Power Dissipation-Max :

3.8W Ta 70W Tc

Height :

5.084mm

Rise Time :

22ns