IRF530NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Recovery Time :

140 ns

Fall Time (Typ) :

25 ns

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Rise Time :

22ns

Number of Elements :

1

Mounting Type :

Through Hole

Termination :

Through Hole

Peak Reflow Temperature (Cel) :

250

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Height :

8.77mm

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Length :

10.5156mm

REACH SVHC :

No SVHC

Radiation Hardening :

No

Transistor Element Material :

SILICON

Lead Pitch :

2.54mm

Element Configuration :

Single

Series :

HEXFET®

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Width :

4.69mm

Transistor Application :

SWITCHING

Nominal Vgs :

4 V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

60A

Power Dissipation :

70W

Turn On Delay Time :

9.2 ns

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

90m Ω @ 9A, 10V

Voltage - Rated DC :

100V

FET Type :

N-Channel

Power Dissipation-Max :

70W Tc

Current Rating :

17A

Turn-Off Delay Time :

35 ns

Continuous Drain Current (ID) :

17A

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Resistance :

90mOhm

Operating Temperature :

-55°C~175°C TJ

Dual Supply Voltage :

100V

Package / Case :

TO-220-3

Published :

2001