IRF530A

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

55W Tc

Width :

4.7mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Resistance :

110mOhm

Threshold Voltage :

2V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

56A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Power Dissipation :

55W

Published :

1997

Gate to Source Voltage (Vgs) :

0V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Weight :

1.8g

Number of Pins :

3

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

14A

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

110m Ω @ 7A, 10V

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Rise Time :

14ns

Mounting Type :

Through Hole

Turn On Delay Time :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Length :

10.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Fall Time (Typ) :

36 ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Turn-Off Delay Time :

55 ns

Packaging :

Tube

Mount :

Through Hole

Height :

9.4mm