IRF530A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

13 ns

Weight :

1.8g

Resistance :

110mOhm

Gate to Source Voltage (Vgs) :

0V

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Height :

9.4mm

Pulsed Drain Current-Max (IDM) :

56A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Transistor Element Material :

SILICON

Rise Time :

14ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

110m Ω @ 7A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

55W Tc

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

JESD-609 Code :

e3

ECCN Code :

EAR99

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Element Configuration :

Single

Mount :

Through Hole

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

55W

Length :

10.1mm

Width :

4.7mm

Published :

1997

FET Type :

N-Channel

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

14A

Drain to Source Breakdown Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

36 ns

Turn-Off Delay Time :

55 ns

Package / Case :

TO-220-3

Threshold Voltage :

2V

Qualification Status :

Not Qualified