IRF5305STRLPBF

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Mfr.Part #
IRF5305STRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 55V 31A D2PAK
Stock
222,152
In Stock :
222,152

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id :
4V @ 250µA
Length :
10.668mm
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
30
Recovery Time :
110 ns
Rds On (Max) @ Id, Vgs :
60m Ω @ 16A, 10V
Number of Pins :
3
Number of Channels :
1
Mount :
Surface Mount
ECCN Code :
EAR99
Voltage - Rated DC :
-55V
Resistance :
60mOhm
Height :
5.084mm
Terminal Form :
Gull wing
Turn On Delay Time :
14 ns
Dual Supply Voltage :
-55V
Mounting Type :
Surface Mount
Factory Lead Time :
12 Weeks
Gate Charge (Qg) (Max) @ Vgs :
63nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
55V
JEDEC-95 Code :
TO-252
REACH SVHC :
No SVHC
Lead Free :
Contains Lead, Lead Free
Current Rating :
-31A
Radiation Hardening :
No
JESD-30 Code :
R-PSSO-G2
Gate to Source Voltage (Vgs) :
20V
Series :
HEXFET®
Current - Continuous Drain (Id) @ 25°C :
31A Tc
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~175°C TJ
Turn-Off Delay Time :
39 ns
Additional Feature :
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
Threshold Voltage :
-4V
Avalanche Energy Rating (Eas) :
280 mJ
Continuous Drain Current (ID) :
-31A
Number of Elements :
1
Case Connection :
DRAIN
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
260
Packaging :
Tape and Reel (TR)
Nominal Vgs :
-4 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
3.8W Ta 110W Tc
Contact Plating :
Tin
FET Type :
P-Channel
Rise Time :
66ns
Element Configuration :
Single
Max Junction Temperature (Tj) :
175°C
Number of Terminations :
2
Fall Time (Typ) :
63 ns
Drain to Source Breakdown Voltage :
-55V
Power Dissipation :
110W
Published :
2005
Width :
9.65mm
Operating Mode :
ENHANCEMENT MODE
Datasheets
IRF5305STRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF5305STRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, IRF5305STRLPBF pinout, IRF5305STRLPBF datasheet PDF, IRF5305STRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF5305STRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF5305STRLPBF


P-Channel Tape & Reel (TR) 60m Ω @ 16A, 10V ±20V 1200pF @ 25V 63nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF5305STRLPBF Description


IRF5305STRLPBF is a P-channel MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 55V. The operating temperature of the IRF5305STRLPBF is -55°C~175°C TJ and its maximum power dissipation is 110W. IRF5305STRLPBF has 3 pins and it is available in Tape & Reel packaging way.



IRF5305STRLPBF Features


  • Max Junction Temperature (Tj): 175°C

  • Avalanche Energy Rating (Eas): 280 mJ

  • Drain to Source Breakdown Voltage: -55V

  • Continuous Drain Current (ID): -31A



IRF5305STRLPBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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