IRF5305STRLPBF
- Mfr.Part #
- IRF5305STRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 55V 31A D2PAK
- Stock
- 222,152
- In Stock :
- 222,152
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.668mm
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Recovery Time :
- 110 ns
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 16A, 10V
- Number of Pins :
- 3
- Number of Channels :
- 1
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -55V
- Resistance :
- 60mOhm
- Height :
- 5.084mm
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 14 ns
- Dual Supply Voltage :
- -55V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 55V
- JEDEC-95 Code :
- TO-252
- REACH SVHC :
- No SVHC
- Lead Free :
- Contains Lead, Lead Free
- Current Rating :
- -31A
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 39 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Threshold Voltage :
- -4V
- Avalanche Energy Rating (Eas) :
- 280 mJ
- Continuous Drain Current (ID) :
- -31A
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- -4 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 3.8W Ta 110W Tc
- Contact Plating :
- Tin
- FET Type :
- P-Channel
- Rise Time :
- 66ns
- Element Configuration :
- Single
- Max Junction Temperature (Tj) :
- 175°C
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 63 ns
- Drain to Source Breakdown Voltage :
- -55V
- Power Dissipation :
- 110W
- Published :
- 2005
- Width :
- 9.65mm
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IRF5305STRLPBF

P-Channel Tape & Reel (TR) 60m Ω @ 16A, 10V ±20V 1200pF @ 25V 63nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF5305STRLPBF Description
IRF5305STRLPBF is a P-channel MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 55V. The operating temperature of the IRF5305STRLPBF is -55°C~175°C TJ and its maximum power dissipation is 110W. IRF5305STRLPBF has 3 pins and it is available in Tape & Reel packaging way.
IRF5305STRLPBF Features
-
Max Junction Temperature (Tj): 175°C
-
Avalanche Energy Rating (Eas): 280 mJ
-
Drain to Source Breakdown Voltage: -55V
-
Continuous Drain Current (ID): -31A
IRF5305STRLPBF Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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